Part Number
|
RFD16N03L |
Manufacturer
|
Harris |
Description
|
Enhancement-Mode Power MOSFET |
Published
|
Jan 21, 2017 |
Detailed Description
|
SEMICONDUCTOR
RFD16N03L, RFD16N03LSM
December 1995
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode P...
|
Datasheet
|
RFD16N03L
|
Overview
SEMICONDUCTOR
RFD16N03L, RFD16N03LSM
December 1995
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
Features
Packaging
• 16A, 30V
• rDS(ON) = 0.
022Ω • Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL Circuits
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE DRAIN GATE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve • +175oC Operating Temperature
JEDEC TO-252AA DRAIN (FLANGE)
Description
The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstandin...
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