DatasheetsPDF.com

RFD16N03LSM

Part Number	RFD16N03LSM
Manufacturer	Harris
Description	Enhancement-Mode Power MOSFET
Published	Jan 21, 2017
Detailed Description	SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode P...
Datasheet	RFD16N03LSM PDF File

Overview

SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Features Packaging • 16A, 30V • rDS(ON) = 0.
022Ω • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature JEDEC TO-252AA DRAIN (FLANGE) Description The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.
This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range,...

Similar Datasheet

RFD16N03L Enhancement-Mode Power MOSFET - Harris
RFD16N03L 16A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFETs - Intersil Corporation
RFD16N03LSM Enhancement-Mode Power MOSFET - Harris
RFD16N03LSM 16A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFETs - Intersil Corporation

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)