Part Number
|
P0660ATF |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Jan 29, 2017 |
Detailed Description
|
P0660ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.25Ω @VGS = 10V
ID 6A
TO-220F
...
|
Datasheet
|
P0660ATF
|
Overview
P0660ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.
25Ω @VGS = 10V
ID 6A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS 600 VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
L = 10mH
ID
IDM IAS EAS
6 4.
3 20 5 134
Power DissipationA
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
39 15.
6 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum jun...
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