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P0660AT

UNIKC
Part Number P0660AT
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 7, 2017
Detailed Description P0660AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.25Ω @VGS = 10V ID 6A TO-220 10...
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P0660AT
P0660AT

Overview
P0660AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.
25Ω @VGS = 10V ID 6A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 6 4.
3 20 Avalanche Energy3 EAS 45 Power Dissipation TC = 25 °C TC = 100 °C PD 113 45.
4 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH, starting TJ = 25°C.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.
1 62.
5 UNITS °C / W REV 1.
1 1 2013-11-20 P0660AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARA...


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