ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated
Schottky Diode
GENERAL DESCRIPTION
The ME4812B is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦12mΩ@VGS=10V
● RDS(ON)≦21mΩ@VGS=4.
5V
● Super high density cell design for extremely...