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ME4812B

Matsuki
Part Number ME4812B
Manufacturer Matsuki
Description N-Channel 30-V(D-S) MOSFET
Published Jan 31, 2017
Detailed Description ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME4812B is the N-Chann...
Datasheet PDF File ME4812B PDF File

ME4812B
ME4812B

Overview
ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES ● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦21mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch PIN CONFIGURATION (SOP-8) Top View Ordering Information: ME4812B (Pb-free) ME4812B-G (Green prod...


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