P6015CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 20 15 60 Avalanche Current IAS 20 Avalanche Energy Repetitive Avalanche Energy2 L = 0.
47mH L = 0.
47mH EAS EAR 94 35 Power Dissipation TC = 25 °C TC = 100 °C PD 48 20 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.
) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)