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P6015CDG

UNIKC
Part Number P6015CDG
Manufacturer UNIKC
Description N-Channel Transistor
Published Feb 1, 2017
Detailed Description P6015CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 20A TO-252 A...
Datasheet PDF File P6015CDG PDF File

P6015CDG
P6015CDG

Overview
P6015CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 20 15 60 Avalanche Current IAS 20 Avalanche Energy Repetitive Avalanche Energy2 L = 0.
47mH L = 0.
47mH EAS EAR 94 35 Power Dissipation TC = 25 °C TC = 100 °C PD 48 20 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.
) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Duty cycle  1%.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.
6 62.
5 UNITS °C / W Ver 1.
2 1 2013-5-24 P6015CDG N-Channel Enhancement Mode MOSFET PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MA...


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