Part Number
|
PA610AD |
Manufacturer
|
UNIKC |
Description
|
N-Channel Transistor |
Published
|
Feb 1, 2017 |
Detailed Description
|
PA610AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
160mΩ @VGS = 10V
ID 12A
TO-252
A...
|
Datasheet
|
PA610AD
|
Overview
PA610AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
160mΩ @VGS = 10V
ID 12A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
12 7 40
Avalanche Current
IAS 24
Avalanche Energy
L = 0.
1mH
EAS
29
Power Dissipation
TC = 25 °C TC = 100 °C
PD
42 17
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL
RqJ...
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