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PA610DD

Part Number	PA610DD
Manufacturer	UNIKC
Description	P-Channel MOSFET
Published	Feb 7, 2017
Detailed Description	PA610DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -100V 200mΩ @VGS = -10V ID -10A TO-252...
Datasheet	PA610DD PDF File

Overview

PA610DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -100V 200mΩ @VGS = -10V ID -10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -10 -8 -28 Avalanche Current IAS -12 Avalanche Energy L = 1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 36 15 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction tempera...

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