P9006EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = -10V ID -4.
5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -4.
5 -3.
5 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 2.
5 1.
6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Duty cycle ≦ 1%.
SYMBOL RθJA TYPICAL MAXIMUM UNITS ...

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