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P9006EDG

Niko-Sem
Part Number P9006EDG
Manufacturer Niko-Sem
Description P-Channel Logic Level Enhancement
Published Oct 21, 2013
Detailed Description NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P9006EDG TO-252 Lead-Free D PRO...
Datasheet PDF File P9006EDG PDF File

P9006EDG
P9006EDG

Overview
NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P9006EDG TO-252 Lead-Free D PRODUCT SUMMARY V(BR)DSS -60V RDS(ON) 90m ID -8A G S 1.
GATE 2.
DRAIN 3.
SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -60 ±20 -7 -6 -30 28 18 -55 to 150 275 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
) 1 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 SYMBOL RθJc RθJA TYPICAL MAXIMUM 3 75 UNITS °C / W °C / W Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -48V, VGS = 0V VDS = -44V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V -32 -60 -1 -2 -3 ±250 nA 1 10 µA A V LIMITS UNIT MIN TYP MAX OCT-21-2004 1 Free Datasheet http://www.
datasheet4u.
com/ NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P9006EDG TO-252 Lead-Free Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = -4.
5V, ID = -6A VGS = -10V, ID = -7A VDS = -10V, ID = -7A DYNAMIC 100 70 9 135 90 m S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr 2 760 VGS = 0V, VDS = -30V, f = 1MHz 90 40 15 VDS = 0.
5V(BR)DSS, VGS = -10V, ID = -7A 2.
5 3.
0 7 VDS = -20V ID ≅ -1A, VGS = -10V, RGS = 6 10 19 12 14 20 34 22 nS nC pF Gate-Source Charge2 Gate-Dr...


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