Part Number
|
P8010BV |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Feb 3, 2017 |
Detailed Description
|
P8010BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID 3.5A
SOP-8
AB...
|
Datasheet
|
P8010BV
|
Overview
P8010BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID 3.
5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
3.
5 2.
8 20
Avalanche Current
IAS 12
Avalanche Energy
L =0.
1mH
EAS
7.
2
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.
4 1.
5
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Case
RqJC
25
Junction-to-Ambient2
R...
Similar Datasheet