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P8010BTF

UNIKC
Part Number P8010BTF
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 9, 2017
Detailed Description P8010BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 11A TO-220F ...
Datasheet PDF File P8010BTF PDF File

P8010BTF
P8010BTF

Overview
P8010BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 11A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 11 7 35 Avalanche Current IAS 14 Avalanche Energy L = 0.
1mH EAS 10 Power Dissipation TC = 25 °C TC = 100 °C PD 24 9.
6 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 5.
2 62.
5 UNITS °C / W REV 1.
0 1 2017/1/19 P8010BTF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Brea...


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