Part Number
|
PE616BA |
Manufacturer
|
UNIKC |
Description
|
MOSFET |
Published
|
Feb 4, 2017 |
Detailed Description
|
PE616BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7mΩ @VGS = 10V
ID 36A
PDFN 3X3P
AB...
|
Datasheet
|
PE616BA
|
Overview
PE616BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7mΩ @VGS = 10V
ID 36A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
36 23 100
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
12 9.
2
Avalanche Current
IAS 23
Avalanche Energy
L =0.
1mH
EAS
26.
4
TC = 25 °C
16.
7
Power Dissipation
TC = 100 °C TA = 25 °C
PD
6.
7 1.
7
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE R...
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