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PE616BA

UNIKC
Part Number PE616BA
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description PE616BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ @VGS = 10V ID 36A PDFN 3X3P AB...
Datasheet PDF File PE616BA PDF File

PE616BA
PE616BA

Overview
PE616BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ @VGS = 10V ID 36A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 36 23 100 Continuous Drain Current TA = 25 °C TA = 70 °C ID 12 9.
2 Avalanche Current IAS 23 Avalanche Energy L =0.
1mH EAS 26.
4 TC = 25 °C 16.
7 Power Dissipation TC = 100 °C TA = 25 °C PD 6.
7 1.
7 TA = 70 °C 1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 75 Junction-to-Case RqJC 7 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment wit...


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