P0603BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 TC = 25 °C(Package Limited) TC = 25 °C(Silicon Limited) ID 30 80 Pulsed Drain Current1 TC = 100 °C 50 IDM 150 Continuous Drain Current2 TA = 25 °C TA = 70 °C 16 ID 13 Avalanche Current IAS 47 Avalanche Energy L = 0.
1mH EAS 112 Power Dissipation TC = 25 °C TC = 100 °C 62.
5 PD 25 Power Dissipation TA = 25 °C TA = 70 °C 2.
5 PD 1.
6 Operating Junction & Storage Temperatur...

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