DatasheetsPDF.com

P0603BDL

UNIKC
Part Number P0603BDL
Manufacturer UNIKC
Description MOSFET
Published Feb 6, 2017
Detailed Description P0603BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 6.8mΩ @VGS = 10V ID 68A TO-252 AB...
Datasheet PDF File P0603BDL PDF File

P0603BDL
P0603BDL

Overview
P0603BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 6.
8mΩ @VGS = 10V ID 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 68 43 160 Avalanche Current IAS 52 Avalanche Energy L = 0.
3mH EAS 135 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.
5 62.
5 UNITS °C / W Ver 1.
1 1 2013-3-14 P0603BDL N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Dr...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)