Part Number
|
P0803BDG |
Manufacturer
|
UNIKC |
Description
|
MOSFET |
Published
|
Feb 6, 2017 |
Detailed Description
|
P0803BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.2mΩ @VGS = 10V
ID 60A
TO-252
AB...
|
Datasheet
|
P0803BDG
|
Overview
P0803BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.
2mΩ @VGS = 10V
ID 60A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
60 38 120
Avalanche Current
IAS 35
Avalanche Energy
L=0.
1mH
EAS
60
Power Dissipation
TC= 25 °C TC= 100°C
PD
50 20
Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
)
Tj, Tstg TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambie...
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