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P0803BDG

UNIKC
Part Number P0803BDG
Manufacturer UNIKC
Description MOSFET
Published Feb 6, 2017
Detailed Description P0803BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.2mΩ @VGS = 10V ID 60A TO-252 AB...
Datasheet PDF File P0803BDG PDF File

P0803BDG
P0803BDG

Overview
P0803BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.
2mΩ @VGS = 10V ID 60A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 60 38 120 Avalanche Current IAS 35 Avalanche Energy L=0.
1mH EAS 60 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambie...


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