P2504BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 25mΩ @VGS = 10V ID 32A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS 40 V VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 32 20 A 70 Avalanche Current IAS 17 Avalanche Energy L = 0.
3mH EAS 44 mJ Power Dissipation TC = 25 °C TC = 100 °C PD 41.
6 W 16.
6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambien...

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