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P2504BDG

UNIKC
Part Number P2504BDG
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 6, 2017
Detailed Description P2504BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 25mΩ @VGS = 10V ID 32A TO-252 100...
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P2504BDG
P2504BDG

Overview
P2504BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 25mΩ @VGS = 10V ID 32A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS 40 V VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 32 20 A 70 Avalanche Current IAS 17 Avalanche Energy L = 0.
3mH EAS 44 mJ Power Dissipation TC = 25 °C TC = 100 °C PD 41.
6 W 16.
6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W Ver 1.
1 1 2013-3-21 P2504BDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN ...


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