MOSFETs Silicon N-Channel MOS (π-MOS)
TK11A65D
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.
54 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 7.
5 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK11A65D
1: Gate (G) 2: Drain (D) 3: Source (S)
TO-220SIS
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 650 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
11 A
Drain current (pulsed)
(Note 1)
ID...