DatasheetsPDF.com

K11A65D

Toshiba Semiconductor
Part Number K11A65D
Manufacturer Toshiba Semiconductor
Description TK11A65D
Published Feb 8, 2017
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK11A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File K11A65D PDF File

K11A65D
K11A65D

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK11A65D 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
54 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 7.
5 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK11A65D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 11 A Drain current (pulsed) (Note 1) IDP 44 Power dissipation (Tc = 25) PD 45 W Single-pulse avalanche energy (Note 2) EAS 506 mJ Avalanche current IAR 11 A Repetitive avalanche energy (Note 3) EAR 4.
5 mJ Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under h...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)