JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX  5Ω@10V  5.
3Ω@4.
5V   ID 340mA SOT-363  6 5 4 1 2 3 FEATURE z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected MARKING APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit 72K MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage VGS Gate-Source voltage 60 V ±20 V ID Drain Current 340 mA PD Power Dissipation 0.
15 W TJ Junction Temperatur...

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