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2N7002K

HOTTECH
Part Number 2N7002K
Manufacturer HOTTECH
Description N-Channel MOSFET
Published Jul 11, 2017
Detailed Description Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. ...
Datasheet PDF File 2N7002K PDF File

2N7002K
2N7002K

Overview
Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VDS VDGR VGS ID IDM (1) PTOT Rthj- amb Parameter Drain-source voltage (VGSm=et0) Drain-gate voltage (RGS =e2r0 kΩ) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (pulsed) Total dissipation at TC = 25°C Thermal resistance junction-ambient max TJ, Tstg Operating junction temperature, Storage temperature Ratings Unit 60 V 600 V ±015 V 0.
35 A 1800 mA 80.
85 W 357.
1 (2) °C/W - 55 to 150 °C 2N7002K N-Channel MOSFET 1.
Gate 2.
Source 3.
Drain SOT-23 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Symbol Parameter Conditions Static characteristics V(BR)DSS drain-source breakdown voltage V(BR)GSS drain-source breakdown voltage VGS(th) gate-source threshold voltage IDSS drain-source leakage current IGSS RDS...


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