Part Number
|
CJQ6601 |
Manufacturer
|
JCET |
Description
|
N-channel and P-channel Complementary MOSFETS |
Published
|
Feb 8, 2017 |
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ6601 N-channel and P-channel Co...
|
Datasheet
|
CJQ6601
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ6601 N-channel and P-channel Complementary MOSFETS
V(BR)DSS
30 V
-30V
RDS(on)MAX
35mΩ@10V 40mΩ@4.
5V
52mΩ@2.
5V 65mΩ@-10V
75mΩ@-4.
5V
90mΩ@-2.
5V
ID
5.
8 A
-4.
2A
SOP8
DESCRIPTIONS
The Device uses advanced trench technology to provide excellent
RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
FEATURES
Including a N-ch CJ3400 MOS and a P-ch
Surface mount package
CJ3401 MOS (independently) in a package
Low RDS(on)
APPLICATIONS Suitable for a multitude of applications.
High-speed power inverter
MA...
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