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CJQ6601

JCET
Part Number CJQ6601
Manufacturer JCET
Description N-channel and P-channel Complementary MOSFETS
Published Feb 8, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ6601 N-channel and P-channel Co...
Datasheet PDF File CJQ6601 PDF File

CJQ6601
CJQ6601


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOP8 Plastic-Encapsulate MOSFETS CJQ6601 N-channel and P-channel Complementary MOSFETS V(BR)DSS 30 V -30V RDS(on)MAX   35mΩ@10V  40mΩ@4.
5V  52mΩ@2.
5V     65mΩ@-10V  75mΩ@-4.
5V  90mΩ@-2.
5V   ID 5.
8 A -4.
2A SOP8 DESCRIPTIONS The Device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
FEATURES  Including a N-ch CJ3400 MOS and a P-ch  Surface mount package CJ3401 MOS (independently) in a package  Low RDS(on) APPLICATIONS  Suitable for a multitude of applications.
 High-speed power inverter MA...



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