Part Number
|
PZ509BA |
Manufacturer
|
UNIKC |
Description
|
P-Channel Enhancement Mode MOSFET |
Published
|
Feb 9, 2017 |
Detailed Description
|
PZ509BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
135mΩ @VGS = -10V
ID -1.2A
SOT-32...
|
Datasheet
|
PZ509BA
|
Overview
PZ509BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
135mΩ @VGS = -10V
ID -1.
2A
SOT-323
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-1.
2 -0.
9 -5.
2
Power Dissipation
TA = 25 °C TA = 70 °C
PD
0.
3 0.
2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on ...
Similar Datasheet