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PZ509BA

Part Number	PZ509BA
Manufacturer	UNIKC
Description	P-Channel Enhancement Mode MOSFET
Published	Feb 9, 2017
Detailed Description	PZ509BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 135mΩ @VGS = -10V ID -1.2A SOT-32...
Datasheet	PZ509BA PDF File

Overview

PZ509BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 135mΩ @VGS = -10V ID -1.
2A SOT-323 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -1.
2 -0.
9 -5.
2 Power Dissipation TA = 25 °C TA = 70 °C PD 0.
3 0.
2 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on ...

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PZ509BA P-Channel Enhancement Mode MOSFET - UNIKC

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