PRELIMINARY
APE HT-0103 High Temperature Silicon Carbide
Schottky Diode
FEATURES
High temperature: Tc(max) = 225 C
1200 V / 10 A / 64 nC
Tj(max) = 225 C
AS9100:Rev.
C-certified manufacturing, traceable throughout value chain
Near zero forward and reverse recovery
Extremely fast switching
High system efficiency
Hermetic seal; flux free, void free packaging
Backside isolation
High reliability
APPLICATIONS
Downhole tools High efficiency converters Motor drives Aerospace: Military & Commercial Smart grid/grid-tie distributed generation
TO-254 Package
AK A
Absolute Maximum Ratings1 (at Tj = 25 C unless otherwise stated)
Symbol
Parameter
VRRM Repetitiv...