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APEHT-0103

Part Number	APEHT-0103
Manufacturer	APEI
Description	High Temperature Silicon Carbide Schottky Diode
Published	Feb 10, 2017
Detailed Description	PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Schottky Diode FEATURES  High temperature: Tc(max) = 225 C ...
Datasheet	APEHT-0103 PDF File

Overview

PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Schottky Diode FEATURES  High temperature: Tc(max) = 225 C 1200 V / 10 A / 64 nC Tj(max) = 225 C  AS9100:Rev.
C-certified manufacturing, traceable throughout value chain  Near zero forward and reverse recovery  Extremely fast switching  High system efficiency  Hermetic seal; flux free, void free packaging  Backside isolation  High reliability APPLICATIONS  Downhole tools  High efficiency converters  Motor drives  Aerospace: Military & Commercial  Smart grid/grid-tie distributed generation TO-254 Package AK A Absolute Maximum Ratings1 (at Tj = 25 C unless otherwise stated) Symbol Parameter VRRM Repetitive peak reverse voltage Condition(s) VDC DC blocking voltage IF IFRM IFSM IF(max) Continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Non-repetitive peak forward current Ptot Power dissipation Tj Operating jun...

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APEHT-0103 High Temperature Silicon Carbide Schottky Diode - APEI

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