DATA SHEET
SILICON
TRANSISTORS
2SD1616, 2SD1616A
NPN SILICON EPITAXIAL
TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Low VCE(sat):
VCE(sat) = 0.
15 V TYP.
(IC = 1.
0 A, IB = 50 mA) • Large PT in small dimension with versatility
PT = 0.
75 W, VCEO = 50/60 V, IC(DC) = 1.
0 A • Complementary
transistor with the 2SB1116 and 1116A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(Pulse)*
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50...