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2SD1616

NEC
Part Number 2SD1616
Manufacturer NEC
Description NPN SILICON EPITAXIAL TRANSISTOR
Published Oct 30, 2005
Detailed Description DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS A...
Datasheet PDF File 2SD1616 PDF File

2SD1616
2SD1616

Overview
DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.
15 V TYP.
(IC = 1.
0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.
75 W, VCEO = 50/60 V, IC(DC) = 1.
0 A • Complementary transistor with the 2SB1116 and 1116A PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse)* PT Tj Tstg Ratings 2SD1616 2S...


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