Part Number
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TC58BVG2S0HBAI6 |
Manufacturer
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Toshiba |
Description
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4G-BIT (512M x 8 BIT) CMOS NAND E2PROM |
Published
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Feb 16, 2017 |
Detailed Description
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TC58BVG2S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIP...
|
Datasheet
|
TC58BVG2S0HBAI6
|
Overview
TC58BVG2S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BVG2S0HBAI6 is a single 3.
3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TC58BVG2S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and dat...
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