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TC58BVG2S0HBAI4

Toshiba
Part Number TC58BVG2S0HBAI4
Manufacturer Toshiba
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Published Oct 19, 2015
Detailed Description TC58BVG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet PDF File TC58BVG2S0HBAI4 PDF File

TC58BVG2S0HBAI4
TC58BVG2S0HBAI4

Overview
TC58BVG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG2S0HBAI4 is a single 3.
3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TC58BVG2S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The TC58BVG2S0HBAI4 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.
FEATURES • Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 2008 blocks Max 2048 blocks • Power supply VCC = 2.
7V to 3.
6V • Access time Cell array to register 55 µs typ.
(Single Page Read) / 90µs typ.
(Multi Page Read) Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Program Auto Block Erase 340 µs/page typ.
2.
5 ms/block typ.
• Operating current Read (25 ns cycle) Program (avg.
) Erase (avg.
) Standby 30 mA max.
30 mA max 30 mA max 50 µA max • Package P-TFBGA63-0911-0.
80CZ (Weight: 0.
15 g typ.
) • 8bit ECC for each 528Byte ...


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