Part Number
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TC58BVG0S3HBAI6 |
Manufacturer
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Toshiba |
Description
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1G-BIT (128M x 8 BIT) CMOS NAND E2PROM |
Published
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Feb 16, 2017 |
Detailed Description
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TC58BVG0S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M × 8 BIT) CMOS NAND E2PROM
DESCRIP...
|
Datasheet
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TC58BVG0S3HBAI6
|
Overview
TC58BVG0S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BVG0S3HBAI6 is a single 3.
3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BVG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data...
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