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TC58BVG0S3HBAI4

Toshiba
Part Number TC58BVG0S3HBAI4
Manufacturer Toshiba
Description 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Published Oct 19, 2015
Detailed Description TC58BVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet PDF File TC58BVG0S3HBAI4 PDF File

TC58BVG0S3HBAI4
TC58BVG0S3HBAI4

Overview
TC58BVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG0S3HBAI4 is a single 3.
3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BVG0S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The TC58BVG0S3HBAI4 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.
FEATURES • Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 1004 blocks Max 1024 blocks • Power supply VCC = 2.
7V to 3.
6V • Access time Cell array to register 40 µs typ.
Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Program Auto Block Erase 330 µs/page typ.
2.
5 ms/block typ.
• Operating current Read (25 ns cycle) Program (avg.
) Erase (avg.
) Standby 30 mA max.
30 mA max 30 mA max 50 µA max • Package P-TFBGA63-0911-0.
80CZ (Weight: 0.
15 g typ.
) • 8bit ECC for each 528Bytes is implemented on a chip.
1 2012-10-01C PIN ASSIGNMENT (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 A NC NC ...


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