JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
DFNWB3×2-08L-B Power Management MOSFETs-
Schottky
CJ5853DCB P-channel MOSFET and
Schottky Barrier Diode
V(BR)DSS/VR
-20V 20V
RDS(on)MAX
110mΩ@-4.
5V 160mΩ@-2.
5V 240mΩ@-1.
8V
/
ID/IO
-2.
7A 0.
5A
DFNWB3×2-08L-B
FEATURE z Independent Pinout to Each Device to
Ease Circuit Design z Ultra low V
F
z Featuring a MOSFET and a
Schottky Barrier Diode
MARKING
APPLICATION z Li-lon Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable，
Battery Powered Products
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
P-MOSFET
VDS Drain-Sou...