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CJ5853DC

JCET
Part Number CJ5853DC
Manufacturer JCET
Description P-channel MOSFET and Schottky Barrier Diode
Published Feb 22, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DC P-channel ...
Datasheet PDF File CJ5853DC PDF File

CJ5853DC
CJ5853DC

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DC P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR -20V 20V RDS(on)MAX 110mΩ@-4.
5V 160mΩ@-2.
5V 240mΩ@-1.
8V  / ID/IO -2.
7A  1A   DFNWB3×2-08L-B C D FEATURES APPLICATIONS z Independent Pinout to Each Device to Ease Circuit Design z Li-lon Battery Charging z Ultra low VF z High Side DC-DC Conversion Circuits z Including a CJ2301 MOSFET and a MBR0520 Schottky (independently) in a package z High Side Drive for Small Brushless DC Motors z Power Management in Portable， Battery Powered Products MARKING: Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter P-MOSFET VDS VGS ID IDM* Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse Drain Current Schottky Barrier Diode VRRM Peak Repetitive Reverse Voltage VR DC Blocking Voltage IO Average Rectified Forward Current Power Dissipation, Temperature an...


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