Part Number
|
IRF1404ZS |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Mar 11, 2017 |
Detailed Description
|
PD - 94634B
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Swit...
|
Datasheet
|
IRF1404ZS
|
Overview
PD - 94634B
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings
G
TO-220AB IRF1404Z
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited...
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