isc Silicon
PNP Darlington Power
Transistor
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C
·Complement to Type BDX87/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX88
-45
BDX88A
-60
VCBO
Collector-Base Voltage
BDX88B
-80
BDX88C -100
BDX88
-45
VCEO
Collector-Emitter Voltage
BDX88A
-60
BDX88B
-80
BDX88C -100
VEBO
Emitter-Base Voltage
-5
IC
Co...