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BDX84C

INCHANGE
Part Number BDX84C
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 23, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor BDX84/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -5A ·...
Datasheet PDF File BDX84C PDF File

BDX84C
BDX84C

Overview
isc Silicon PNP Darlington Power Transistor BDX84/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX84 -45 BDX84A -60 VCBO Collector-Base Voltage BDX84B -80 BDX84C -100 BDX84 -45 VCEO Collector-Emitter Voltage BDX84A -60 BDX84B -80 BDX84C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collector Current-Peak -15 IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -250 125 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction...


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