MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=80A@ VGS=10V； RDS(ON)8mΩ @ VGS=10V ● Special process technology for high ESD capability ● Special designed for convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment PIN Configuration TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device De...

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