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MSN0880K

MORESEMI
Part Number MSN0880K
Manufacturer MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Published Mar 13, 2017
Detailed Description MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ●...
Datasheet PDF File MSN0880K PDF File

MSN0880K
MSN0880K

Overview
MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ● Special process technology for high ESD capability ● Special designed for convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment PIN Configuration TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0880K MSN0880K TO-220-3L Reel Size - Tape width - Quantity - Table 1.
Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Curre...


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