Part Number
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WFF18N50L |
Manufacturer
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Winsemi |
Description
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Silicon N-Channel MOSFET |
Published
|
Mar 21, 2017 |
Detailed Description
|
WFF18N50L Product Description
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.31Ω)@VGS=10V Ultra-low Gate ch...
|
Datasheet
|
WFF18N50L
|
Overview
WFF18N50L Product Description
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.
31Ω)@VGS=10V Ultra-low Gate charge(Typical 37.
9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings
Sym...
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