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WFF18N50L

Winsemi
Part Number WFF18N50L
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 21, 2017
Detailed Description WFF18N50L Product Description Silicon N-Channel MOSFET Features  18A,500V,RDS(on)(Max0.31Ω)@VGS=10V  Ultra-low Gate ch...
Datasheet PDF File WFF18N50L PDF File

WFF18N50L
WFF18N50L

Overview
WFF18N50L Product Description Silicon N-Channel MOSFET Features  18A,500V,RDS(on)(Max0.
31Ω)@VGS=10V  Ultra-low Gate charge(Typical 37.
9nC)  Fast Switching Capability  100%Avalanche Tested  Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings Sym...


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