Part Number
|
SI3443DV |
Manufacturer
|
Vishay |
Description
|
MOSFET |
Published
|
Apr 5, 2017 |
Detailed Description
|
P-Channel 2.5-V (G-S) MOSFET
Si3443DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.065 @ VGS = –4.5 V –20...
|
Datasheet
|
SI3443DV
|
Overview
P-Channel 2.
5-V (G-S) MOSFET
Si3443DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.
065 @ VGS = –4.
5 V –20 0.
090 @ VGS = –2.
7 V
0.
100 @ VGS = –2.
5 V
ID (A)
"4.
4 "3.
7 "3.
5
3 mm
TSOP-6 Top View 16 25
34
2.
85 mm
(4) S (3) G
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID
IDM IS PD TJ, Tstg
–20 "12 "4.
4
"3.
5 "20 –1.
7 2.
0 1.
3 –55 to 150...
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