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Si3443BDV

Vishay
Part Number Si3443BDV
Manufacturer Vishay
Description P-Channel 2.5-V (G-S) MOSFET
Published Jun 8, 2014
Detailed Description Si3443BDV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I 0.060 at VGS = - 4.5 V - ...
Datasheet PDF File Si3443BDV PDF File

Si3443BDV
Si3443BDV

Overview
Si3443BDV Vishay Siliconix P-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I 0.
060 at VGS = - 4.
5 V - 20 0.
090 at VGS = - 2.
7 V 0.
100 at VGS = - 2.
5 V D FEATURES (A) - 4.
7 - 3.
8 - 3.
7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View 1 6 (3) G (4) S 3 mm 2 5 3 2.
85 mm 4 Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free) Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Part Marking Code: 3B (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 1.
7 2.
0 1.
3 - 55 to 150 - 4.
7 - 3.
8 - 20 - 0.
9 1.
1 0.
7 W °C 5s Steady State - 20 ± 12 - 3.
6 - 2.
8 A Unit V THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on FR4 board, t ≤ 5 s.
t≤5s Steady State Steady State RthJA RthJF Typical 50 90 30 Maximum 62.
5 110 36 °C/W Unit For SPICE model information via the Worldwide Web: www.
vishay.
com/www/product/spice.
htm Document Number: 72749 S-09-0660-Rev.
C, 20-Apr-09 www.
vishay.
com 1 http://www.
Datasheet4U.
com Si3443BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea VGS(th) IGSS IDSS ID(on) V RDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.
7 A, dI/dt = 100 A/µs VDD = - 10 V, RL = 10 Ω ID ≅ - 1.
0 A, VGEN = - 4.
5 V, Rg = 6 Ω f = 1 MHz 5 VDS = - 10 V, VGS = - 4.
5 V, ID = - 4.
7 A VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = - 20 V, ...


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