CEN2301
P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-20V, -2.
7A, RDS(ON) = 110mΩ @VGS = -4.
5V.
RDS(ON) = 160mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-23-T package.
D
DS G
SOT-23-T
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID -2.
7 IDM -10.
8
Maximum Power Dissipation
PD 1.
25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 100
...